HAT2129H silicon n channel power mos fet power switching ade-208-1577b(z) preliminary 3rd. edition aug. 2002 features ? capable of 7 v gate drive ? low drive current ? high density mounting ? low on-resistance r ds(on) = 6 m ? typ. (at v gs = 10 v) outline lfpak 1 2 3 4 5 1, 2, 3 source 4 gate 5 drain g d sss 4 1 23 5
HAT2129H rev.2, aug. 2002, page 2 of 5 absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 40 v gate to source voltage v gss 20 v drain current i d 30 a drain peak current i d(pulse) note1 120 a body-drain diode reverse drain current i dr 30 a avalanche current i ap note 3 20 a avalanche energy e ar note 3 32 mj channel dissipation pch note2 20 w channel temperature tch 150 c storage temperature tstg ?55 to + 150 c notes: 1. pw 10 s, duty cycle 1% 2. tc = 25c 3. value at tch = 25c, rg 50 ?
HAT2129H rev.2, aug. 2002, page 3 of 5 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 40??v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 20??v i g = 100 a, v ds = 0 gate to source leak current i gss ?? 10 av gs = 16 v, v ds = 0 zero gate voltege drain current i dss ??1 av ds = 40 v, v gs = 0 gate to source cutoff voltage v gs(off) 2.0 ? 3.5 v v ds = 10 v, i d = 1 ma static drain to source on state r ds(on) ?6.07.5m ? i d = 15 a, v gs = 10 v note3 resistance r ds(on) ?7.09.5m ? i d = 15 a, v gs = 7 v note3 forward transfer admittance |y fs |2440?s i d = 15 a, v ds = 10 v note3 input capacitance ciss ? 3200 ? pf v ds = 10 v output capacitance coss ? 450 ? pf v gs = 0 reverse transfer capacitance crss ? 260 ? pf f = 1 mhz total gate charge qg ? 46 ? nc v dd = 10 v gate to source charge qgs ? 13.5 ? nc v gs = 10 v gate to drain charge qgd ? 7.5 ? nc i d = 30 a turn-on delay time t d(on) ?22?nsv gs = 10 v, i d = 15 a rise time t r ?33?nsv dd ? 10 v turn-off delay time t d(off) ?67?nsr l = 0.67 ? fall time t f ? 11 ? ns rg = 4.7 ? body?drain diode forward voltage v df ? 0.84 1.10 v if = 30 a, v gs = 0 note3 body?drain diode reverse recovery time t rr ? 50 ? ns if = 30 a, v gs = 0 dif/ dt = 50 a/ s notes: 3. pulse test
HAT2129H rev.2, aug. 2002, page 4 of 5 package dimensions 0.25 m 1.3 max 1.0 3.95 1.1 max 4.9 5.3 max 4.0 ?0.2 14 5 4.2 3.3 0? ?8? 0.07 +0.03 ?.04 0.20 +0.05 ?.03 0.6 +0.25 ?.20 0.25 +0.05 ?.03 6.1 +0.1 ?.3 1.27 0.40 ?0.06 0.75 max 0.10 hitachi code jedec jeita mass (reference value) lfpak 0.080 g as of january, 2002 unit: mm
HAT2129H rev.2, aug. 2002, page 5 of 5 disclaimer 1. hitachi neither warrants nor grants licenses of any rights of hitachi?s or any third party?s patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party?s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi?s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi?s sales office for any questions regarding this document or hitachi semiconductor products. sales offices hitachi, ltd. semiconductor & integrated circuits nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2002. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00 singapore 049318 tel : <65>-6538-6533/6538-8577 fax : <65>-6538-6933/6538-3877 url : http://semiconductor.hitachi.com.sg url http://www.hitachisemiconductor.com/ hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road hung-kuo building taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower world finance centre, harbour city, canton road tsim sha tsui, kowloon hong kong tel : <852>-2735-9218 fax : <852>-2730-0281 url : http://semiconductor.hitachi.com.hk hitachi europe gmbh electronic components group dornacher stra?e 3 d-85622 feldkirchen postfach 201, d-85619 feldkirchen germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi europe ltd. electronic components group whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585200 hitachi semiconductor (america) inc. 179 east tasman drive san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 6.0
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